wiss. Mitarbeiter:in / Doktorand:in bei Technische Universität Dresden

TUD Dresden University of Technology, as a University of Excellence, is one of the leading and most
dynamic research institutions in the country. Founded in 1828, today it is a globally oriented,
regionally anchored top university as it focuses on the grand challenges of the 21st century. It
develops innovative solutions for the world's most pressing issues. In research and academic
programs, the university unites the natural and engineering sciences with the humanities, social
sciences and medicine. This wide range of disciplines is a special feature, facilitating interdisciplinarity
and transfer of science to society. As a modern employer, it offers attractive working conditions to all
employees in teaching, research, technology and administration. The goal is to promote and develop
their individual abilities while empowering everyone to reach their full potential. TUD embodies a
university culture that is characterized by cosmopolitanism, mutual appreciation, thriving innovation
and active participation. For TUD diversity is an essential feature and a quality criterion of an excellent
university. Accordingly, we welcome all applicants who would like to commit themselves, their
achievements and productivity to the success of the whole institution.

At the Faculty of Electrical and Computer Engineering, Institute of Semiconductors and
Microsystems (IHM), the Chair of Nanoelectronics offers a position as

Research Associate / PhD student (m/f/x)
(subject to personal qualification employees are remunerated according to salary group E 13 TV-L)

starting as soon as possible. The position is limited to 36 months. The period of employment is
governed by the Fixed Term Research Contracts Act (Wissenschaftszeitvertragsgesetz-WissZeitVG).
The position offers the chance to obtain further academic qualification (usually PhD).

Tasks: As part of a DFG project, the Neurotransistor-based Memristive Crossbar Memcomputing
(NeuroMCross) is to be scientifically investigated. Hybrid memristor crossbar structures on the gate
electrode of a silicon-based field-effect transistor are to be fabricated, electrically characterized and
modelled. The existing clean room at the chair and the connected research rooms and laboratories
will be used for the production and structuring of individual resistive switching elements, integrated
transistor-based switching elements with functionalized gate electrode(s) and for the fabrication of
matrix structures. A variety of semiconductor technology systems and processes are used, also with
partners (especially in the clean room/research laboratory of NaMLab gGmbH), e.g. UV contact
lithography, thermal oxidation/diffusion or ALD/CVD/PVD. Electrical characterization is carried out
using DC and transient measurement methods in order to check the switching properties of the
transistors and matrix structures as well as the memory behavior of the memristive components. The
modeling of the memristive and memcapacitive properties is part of the project and will be supported.
Close scientific cooperation with other research groups (Namlab gGmbH, Chair of Fundamentals of
Electrical Engineering at TUD), regular project meetings, participation in conferences and publication
in scientific journals will be part of the project.

Requirements: above-average university degree in the field of electrical engineering, physics,
materials science or a related field. Furthermore, a very good command of English, excellent
teamwork skills and an independent and self-reliant way of working are expected. Experience in
working in a clean room environment and in the practical implementation of thin film processes
and/or analyses on semiconductor materials and semiconductor devices is desirable. Knowledge of
electrical characterization methods is preferred.

TUD strives to employ more women in academia and research. We therefore expressly encourage
women to apply. The University is a certified family-friendly university and offers a Dual Career
Service. We welcome applications from candidates with disabilities. If multiple candidates prove to be

equally qualified, those with disabilities or with equivalent status pursuant to the German Social Code
IX (SGB IX) will receive priority for employment.

Please submit your detailed application with the usual documents by February 19, 2024 (stamped
arrival date of the university central mail service or the time stamp on the email server of TUD applies),
preferably via the TUD SecureMail Portal https://securemail.tu-dresden.de by sending it as a single
pdf file to nanoelektronik@tu-dresden.de or to: